source voltage中文是什么意思

發(fā)音:

中文翻譯
造句

電源電壓
源電壓

source n. 1.源頭，水源，源泉。 2.根源，本源；來源。 3 ...
voltage n. 【電學】電壓，電壓量，伏特數(shù)。 the worki ...
source of voltage 電源
voltage source 電壓電源; 電壓源; 定壓源
voltage-source 電壓電
voltage controlled voltage source 電壓控制電壓源
voltage source voltage measurement 施加電壓電壓測試
voltage-controlled voltage source 電壓控制電壓源
vcvs voltage controlled voltage source 電壓控制的電壓源
accompanied voltage source 有伴電壓源
constant voltage dc source 恒壓直流電源
constant voltage source 恒定電壓源; 恒壓電源
constant-voltage welding source 恒壓式焊接電源; 平特性焊接電源
current controlled voltage source 電流控制電壓源
current-controlled voltage source 電流控制電壓源
drain source breakdown voltage 漏源擊穿電壓; 漏源極擊穿電壓
drain source voltage 漏源電壓
drain-source voltage 漏源電壓
electronical standard voltage source 電子標準電壓源
gate-to-source voltage 柵極
high voltage source 高壓電源
high voltage source box 高壓電源箱
ideal voltage source 理想電壓源
independent voltage source 獨立電壓源
low-voltage arc source 低壓弧離子源

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例句與用法

This character of mcml makes it favorable for constructing low power circuits because lowering the source voltage is the most effective way to lower the power
由于降低電源電壓是降低集成電路功耗最有效的手段， mcml電路的這一特點十分有利于集成電路的低功耗實現(xiàn)。
The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
As the experiment results show , multiple reasons led to the offset of oscillating frequency , including diode ’ s nonlinear characteristic , fluctuation of electrical source voltage , traction of load impedance , change of environmental temperature and humidity and the design of circuit
實驗結(jié)果表明多種因素引起了振蕩頻率的偏移,包括二極管的非線性、電源電壓的波動、負載的牽引、環(huán)境溫度濕度變化以及電路板設(shè)計方面的因素等。
In this paper , the working principle of the interleaving two - transistor forward converter is analyzed in detail , and the waveforms of the switch drain - to - source voltage and transformer magnetizing current are researched in different duty cycle conditions . the simulation model is constructed and the simulation results verify the analysis
本文分析了交錯并聯(lián)雙管正激變換器的工作原理,研究了在不同占空比條件下開關(guān)管的漏源電壓和變壓器勵磁電流波形,建立了仿真模型,仿真結(jié)果證明理論分析的正確性。
Finally , th e design of low voltage low power current mode cmos circuit is discussed , the design is base on a novel structure which converts serial switches to parallel switches , allows the circuits to perform under lower source voltage which makes low power consuming possible , examples and simulation results are also given to prove the low power character can be reached
論文最后還討論了低電壓低功耗電流型cmos電路的設(shè)計，這一設(shè)計巧妙地將電路中的串聯(lián)開關(guān)轉(zhuǎn)換成并聯(lián)開關(guān)，使電流型cmos電路能在更低的電源電壓下工作，實現(xiàn)了電路的低功耗設(shè)計。論文中給出的設(shè)計實例和仿真結(jié)果驗證了基于并聯(lián)開關(guān)的電流型cmos電路的低功耗特性。
To put into operation a large amount of non - linear load , make in harmony wave of rural power grids serious becoming in pollution , pass to rural local electric wire netting main in harmony analysis of wave source , put forward in order to restrain from insert rural power grids in harmony wave source voltage total in harmony wave distortion rate and the containing rate change last device number pulsating for increase of goal , increase the pulse of the current change device and install light specified value electricity active wave filter mix with passive wave filter near the harmonics source to control the wave in harmony
摘要大量非線性負荷的投運，使農(nóng)村電網(wǎng)的諧波污染日趨嚴重，通過對農(nóng)村地方電網(wǎng)主要諧波源的分析，最終提出了以限制接入農(nóng)村電網(wǎng)的諧波源的電壓總諧波畸變率和各次諧波電壓含有率為目標的增加換流裝置脈動數(shù)，以及在諧波源附近裝設(shè)小額定值的電力有源濾波器配以無源濾波器的混合型電力濾波方式，以進行諧波治理。
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on
本文還采用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現(xiàn)象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關(guān)系、旁柵效應與浮柵的關(guān)系等研究。

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